Title : ( A novel AlGaN/GaN HEMT with a p-layer in the barrier )
Authors: S. M. Razavi , S. H. Zahiri , Seyed Ebrahim Hosseini ,
Full TextAbstract
The potentialimpactofgallium-nitride(GaN)highelectronmobilitytransistor(HEMT)withap-layerin the barrierisreported.Weinvestigatethedeviceperformancefocusingonshortchanneleffects,gate– drain capacitance,electric field, breakdownvoltage,DCoutputconductance(go), draincurrent,DCtrans- conductance (gm) andsub-thresholdslopeusingtwo-dimensionalandtwo-carrierdevicesimulations. Our simulationresultsrevealthattheproposedstructurereducestheshortchanneleffects,gate–drain capacitance, sub-thresholdslopeand go comparedtotheconventionalandT-gatestructures.Alsothis new structurereducesthepeakelectric field atthegatecornernearthedrainandconsequentlyincreases the breakdownvoltagesignificantly.Increasingp-layerlength(Lp) andthickness(Tp), improvesthe breakdownvoltage,shortchanneleffects,gate–drain capacitanceand go.
Keywords
, GaN HEMT Short channeleffect Gate capacitance Electric field DC output conductance Sub, threshold slope
@article{paperid:1035723,
author = {S. M. Razavi and S. H. Zahiri and Hosseini, Seyed Ebrahim},
title = {A novel AlGaN/GaN HEMT with a p-layer in the barrier},
journal = {Physica E},
year = {2013},
volume = {54},
number = {1},
month = {December},
issn = {1386-9477},
pages = {24--29},
numpages = {5},
keywords = {GaN HEMT
Short channeleffect
Gate capacitance
Electric field
DC output conductance
Sub-threshold slope},
}
%0 Journal Article
%T A novel AlGaN/GaN HEMT with a p-layer in the barrier
%A S. M. Razavi
%A S. H. Zahiri
%A Hosseini, Seyed Ebrahim
%J Physica E
%@ 1386-9477
%D 2013
