In this paper a hetero-junction tunnel field effect transistor (HJ-TFET) with the channel length of 20 nm has been introduced and simulated in which the source/channel heterojunction is AlGaAs /InGaAs. With precise selection of the mole fraction this hetero-junction, excellent device operation has been achieved. With optimized mole fraction and doping value in the source and the channel regions, on-state current as high as 18 μA/μm and very low off-state current of 10-18 is attained. Moreover in the proposed TFET Ion/Ioff ratio is 1013 which is very high. Also sub-threshold swing of 30 mv/decade is achieved which is well below 60 mv/decade

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