Title : ( Design of tunneling field-effect transistor (TFET) with AlGaAs/InGaAs hetero-junction )
Authors: M. R. Salehi , E. Abiri , Seyed Ebrahim Hosseini , B. Dorostkar ,
Full TextAbstract
In this paper a hetero-junction tunnel field effect transistor (HJ-TFET) with the channel length of 20 nm has been introduced and simulated in which the source/channel heterojunction is AlGaAs /InGaAs. With precise selection of the mole fraction this hetero-junction, excellent device operation has been achieved. With optimized mole fraction and doping value in the source and the channel regions, on-state current as high as 18 μA/μm and very low off-state current of 10-18 is attained. Moreover in the proposed TFET Ion/Ioff ratio is 1013 which is very high. Also sub-threshold swing of 30 mv/decade is achieved which is well below 60 mv/decade
Keywords
, band-to-band tunneling, high-k dielectric, hetero-junction, gated p-i-n diode, sub threshold swing, tunneling transistor
@inproceedings{paperid:1037967,
author = {M. R. Salehi and E. Abiri and Hosseini, Seyed Ebrahim and B. Dorostkar},
title = {Design of tunneling field-effect transistor (TFET) with AlGaAs/InGaAs hetero-junction},
booktitle = {بیست و یکمین کنفرانس مهندسی برق ایران},
year = {2013},
location = {مشهد, IRAN},
keywords = {band-to-band tunneling; high-k dielectric; hetero-junction; gated p-i-n diode; sub threshold swing;
tunneling transistor},
}
%0 Conference Proceedings
%T Design of tunneling field-effect transistor (TFET) with AlGaAs/InGaAs hetero-junction
%A M. R. Salehi
%A E. Abiri
%A Hosseini, Seyed Ebrahim
%A B. Dorostkar
%J بیست و یکمین کنفرانس مهندسی برق ایران
%D 2013
