Solid State Communications, ( ISI ), Volume (246), No (14), Year (2016-7) , Pages (29-32)

Title : ( Temperature and field dependence of the flux pinning mechanisms in Fe(1.06)Te(0.6)Se(0.4) single crystal )

Authors: Sayed Jaber Hossaini , Shaban Reza Ghorbani , Hadi Arabi , X.L. Wang , C.T. Lin ,

Citation: BibTeX | EndNote

The temperature and magnetic field dependence of the magnetization and critical current density of 〖Fe〗_1.06 〖Te〗_0.6 〖Se〗_0.4 single crystal have been investigated, and the flux pinning mechanism has been analyzed. The critical current density results indicate that there are different pinning mechanisms in this crystal. The pinning mechanisms are studied in terms of the pinning model where the normalized volume pinning force, f_p, versus h=H⁄H_irr , where Hirr is the irreversibility, were studied systematically. It was found that a variety of pinning mechanisms including normal point pinning, normal surface pinning, and pinning based on spatial variation in the Ginzburg-Landau parameter (Δk pinning) pinning mechanisms coexist. The effects each of the different pinning mechanisms were obtained. The results show that the contributions of the real pinning mechanisms are dependent on the temperature and magnetic field in this the single crystal.

Keywords

Fe1.06Te0.6Se0.4 single crystal; Critical current density; Flux pinning
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@article{paperid:1057633,
author = {Hossaini, Sayed Jaber and Ghorbani, Shaban Reza and Arabi, Hadi and X.L. Wang and C.T. Lin},
title = {Temperature and field dependence of the flux pinning mechanisms in Fe(1.06)Te(0.6)Se(0.4) single crystal},
journal = {Solid State Communications},
year = {2016},
volume = {246},
number = {14},
month = {July},
issn = {0038-1098},
pages = {29--32},
numpages = {3},
keywords = {Fe1.06Te0.6Se0.4 single crystal; Critical current density; Flux pinning mechanism.},
}

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%0 Journal Article
%T Temperature and field dependence of the flux pinning mechanisms in Fe(1.06)Te(0.6)Se(0.4) single crystal
%A Hossaini, Sayed Jaber
%A Ghorbani, Shaban Reza
%A Arabi, Hadi
%A X.L. Wang
%A C.T. Lin
%J Solid State Communications
%@ 0038-1098
%D 2016

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