Title : ( Design and AC Modeling of a Bipolar GNR-h-BN RTD With Enhanced Tunneling Properties and High Robustness to Edge Defects )
Authors: Mahdi Khoshbaten , Seyed Ebrahim Hosseini ,
Full TextAbstract
This paper proposes a robust to defects and short length device (RDSLD), a newly in-plane resonant tunneling diode (RTD), and its ac-modeling with the minimum length of 3 nm. The proposed structure has robust performance in the presence of defects. It also has a high degree of flexibility in tuning electronic specifications. By using bipolar doping and a special h-boron nitride barrier pattern, these unique features are obtained. The simulation results verify that the proposed structure has the potential for replacing conventional RTD diodes. Such that the peak-tovalley ratio (PVR) and the maximum current of 4500, 450 nA for perfect bowtie and 3.45, 1256 nA for rhombic barrier shape structure are obtained, respectively. Also, negative differential resistance (NDR) is observed in all of the structures with vacancy and impurity defects. The effect of the geometrical parameters on the charge transmission of the device is another issue that is addressed in this paper. Furthermore, the analytical and numerical capacitance model parameters are presented.
Keywords
, Circuit modeling, bipolar doping, boron nitride (BN), graphene, resonant tunneling diodes (RTDs), robust to defects.
@article{paperid:1078660,
author = {Khoshbaten, Mahdi and Hosseini, Seyed Ebrahim},
title = {Design and AC Modeling of a Bipolar GNR-h-BN RTD With Enhanced Tunneling Properties and High Robustness to Edge Defects},
journal = {IEEE Transactions on Electron Devices},
year = {2019},
volume = {66},
number = {8},
month = {August},
issn = {0018-9383},
pages = {3675--3682},
numpages = {7},
keywords = {Circuit modeling; bipolar doping; boron nitride (BN); graphene; resonant tunneling diodes (RTDs);
robust to defects.},
}
%0 Journal Article
%T Design and AC Modeling of a Bipolar GNR-h-BN RTD With Enhanced Tunneling Properties and High Robustness to Edge Defects
%A Khoshbaten, Mahdi
%A Hosseini, Seyed Ebrahim
%J IEEE Transactions on Electron Devices
%@ 0018-9383
%D 2019
