Decreasing Drain‐Induced‐Barrier‐Lowering (DIBL) is one of the nondesirable short‐channel effects, causes the threshold voltage of the transistor to be reduced by increasing the drain voltage. DIBL makes it impossible for engineers to consider VT as a constant, and it is necessary to calculate VT as a function of the drain voltage. Therefore, to consider the DIBL effect in the design of ICs, a large computational burden is imposed on the system, which slows down the simulation process in circuit‐level simulators. Accordingly, a Nonlinear Feed‐Forward Memory‐Less (NFFML) model using the Gram‐Schmidt orthogonalization approach is proposed, which calculates the VT of the new generation of MOSFETs, that is, Junctionless Double‐Gate MOSFETs (JL‐DG‐MOSFETs), with high precision and a significant speed‐up in the computation of the model. It is shown that the proposed numerical method is 313 times faster than the state‐of‐the‐art analytical model. The normalized MSE is 0.435% on average, showing that the proposed approach can be a fast and accurate candidate for replacing the analytical modeling.

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