In this paper, a new highly linear and wideband structure is proposed for inductorless Low-Noise Amplifiers (LNAs). To increase the linearity behavior of the circuit, the proposed structure utilizes two cross-coupled networks with the aid of Derivative Superposition (DS) technique. One of the employed cross-coupling networks is a resistive load with MOSFETs cross-coupling, and the other one is a Cross-Coupled Common-Gate (CCCG) amplifier. The proposed circuit is designed and simulated in a standard 0.18-μm CMOS technology. The simulation results show that the proposed LNA presents an average NF of 4.59 dB within the operation band from 0.24 GHz to 6.38 GHz. Moreover, the voltage gain and the maximum IIP3 of the circuit are 12±0.9 dB and 4.81 dBm, respectively. Finally, the simulated value of scattering parameter S11, which represents the input matching of the circuit, is less than -8 dB.

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