Bismuth antimony telluride compounds are among the best thermoelectric materials with high efficiency. Many parameters including the chemical composition, microstructure, synthesis procedure, deposition process, thickness, and annealing treatment can influence on thermoelectric properties of thin films. In this work, the effect of the annealing process on morphology and thermoelectric properties of Bi0.5Sb1.5Te3 thin films was investigated. The films were fabricated by ball milling and thermal evaporation process. Subsequently, annealing treatment was performed on some of the thin films at 373 K for 1 h. X-ray diffraction patterns confirmed that the procedure considered in the present research is successful in the synthesis of nanostructured Bi0.5Sb1.5Te3 thin film with a single phase of a ternary alloy. Furthermore, the EDS result demonstrated a slight increase of Te element versus the stoichiometric ratio. Analysis of SEM images showed that the grain size of the thin film materials decreases after the annealing process. Thermoelectric results illustrated that the annealed thin films show a higher carrier concentration (3.41×1014 cm-2) at 305 K in comparison to the unannealed ones (3.28×1014 cm-2). Furthermore, the Seebeck coefficient decreased from 204 to 168 µV/K at 323 K, as the samples were annealed. However, the power factor of the annealed thin films was as high as 2.8 µW/k2.cm at 473 K in comparison with the power factor of the unannealed thin films (1.3 µW/k2.cm). In conclusion, the annealing process could improve some properties like electrical conductivity and power factor affecting thermoelectric properties of thin films.

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