Bi2Te2.7Se0.3 compound is one of the favorable thermoelectric materials operating at low temperatures. In the present study, Bi2Te2.7Se0.3 thin films were fabricated using hydrothermally synthesized powders by electron beam and thermal evaporation methods. X-ray diffraction analysis, SEM assessment, Hall measurement, and the Seebeck coefficient tests were done on the fabricated thin films. The results confirmed the formation of the Bi2Te2.7Se0.3 compound after the hydrothermal process and the deposition approaches. The results showed the larger grain size and so the higher electrical conductivity of the thin films fabricated by an electron beam technique compared with those fabricated by a thermal evaporation procedure. The higher electrical conductivity of thin films fabricated by an electron beam technique (147.52 〖(Ω.cm)〗^(-1)) compared with a thermal evaporation procedure (3.99〖 (Ω.cm)〗^(-1) ) was the positive point of the electron beam procedure. Moreover, the elevated power factor of the samples fabricated by the electron beam technique (5.35 µW/cmK2) compared with the thin films fabricated by thermal evaporation approach (0.25 µW/cmK2) confirmed the electron beam method as a favorable approach for the manufacturing of Bi2Te2.7Se0.3 thin film materials.

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