8th International Conference on Solid-State and Integrated Circuit Technology, 2006. ICSICT \'06. , 2006-10-23

Title : ( Technological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance )

Authors: Mojtaba Joodaki , H. Hillmer ,

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Abstract

A new method for realization of self-aligned lateral SiGe-HBT (SiGe-SLHBT) is introduced and ac and dc simulations are performed based on a two-dimensional physical model. The fabrication process is simple and requires a minimum number of masks. The details of the fabrication process have been discussed. Simulation results show a dc current gain of 658, fmax = 220 GHz,fT = 62.5 GHz and MSG = 32.1 dB at 1 GHz for the self-aligned lateral HBT (SLHBT) with 50 nm thick germanium layer (30 nm p-doped base width) and a dc current gain of 300, fmax = 133.5 GHz, fT = 24.7 GHz and MSG = 33.5 dB at 1 GHz for the SLHBT with 100 nm thick germanium layer (50 nm p-doped base width). This provides a low-cost high performance technology which could be used in many RF applications

Keywords

lateral SiGe HBT; the SiGe layer
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@inproceedings{paperid:1037035,
author = {Joodaki, Mojtaba and H. Hillmer},
title = {Technological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance},
booktitle = {8th International Conference on Solid-State and Integrated Circuit Technology, 2006. ICSICT \'06.},
year = {2006},
location = {Shanghai},
keywords = {lateral SiGe HBT; the SiGe layer},
}

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%0 Conference Proceedings
%T Technological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance
%A Joodaki, Mojtaba
%A H. Hillmer
%J 8th International Conference on Solid-State and Integrated Circuit Technology, 2006. ICSICT \'06.
%D 2006

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