Title : ( DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor )
Authors: Boshra gh , Mahmood Rezaee Roknabadi , Ahmad Kompany ,
Full TextAbstract
The chemical stability of graphene and graphdiyne means that they can be stacked in different combinations to produce a new nanotransistor for ultra-high frequency applications. Here we report a resonant tunneling transistor through a graphene-graphdiyne-graphene heterojunctions sandwiched between two graphene electrodes. The characteristics of this transistor, which were modeled on the basis of density functional theory, revealed that the current is dominated by tunneling transitions.
Keywords
, Graphdiyne, Graphene, Heterojunction, Resonant tunneling transistor, DFT-NEGF
@article{paperid:1066982,
author = {Gh, Boshra and Rezaee Roknabadi, Mahmood and Kompany, Ahmad},
title = {DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor},
journal = {Computational Materials Science},
year = {2018},
volume = {144},
month = {March},
issn = {0927-0256},
pages = {280--284},
numpages = {4},
keywords = {Graphdiyne; Graphene; Heterojunction; Resonant tunneling transistor; DFT-NEGF},
}
%0 Journal Article
%T DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor
%A Gh, Boshra
%A Rezaee Roknabadi, Mahmood
%A Kompany, Ahmad
%J Computational Materials Science
%@ 0927-0256
%D 2018
